--- /dev/null	Thu Jan 01 00:00:00 1970 +0000
+++ b/GAN041_650WSB.lib	Mon Oct 16 23:20:01 2023 +1030
@@ -0,0 +1,299 @@
+*******************************************************************************************************
+*
+*  GAN041_650WSB Preliminary Spice Model 22/03/2021
+*
+*  Model generated by Nexperia UK Ltd
+*     Copyright(c) 2021
+*     All rights reserved
+*
+*  Contains proprietary information which is the property of Nexperia.
+*
+*  The information presented in this document is believed to be accurate and 
+*  reliable and may be changed without notice. No liability will be accepted by the
+*  publisher for any consequence of its use.
+*
+*  Nexperia UK Ltd
+*
+*  650V GaN FET Version 2.0
+******************************************************************************************************
+
+.subckt GAN041_650WSB 301 302 303 334
+*
+*  301=D1, 302=G1, 303=S1, 334=mb
+*
+*
+*******************
+**  HEMT_A Begin **
+* xxxx
+* 101=drainHA, 102=gateHA, 103=sourceHA, 106=Si substrate
+
+*bs 109 103 v=0.0005*i(bs) + 50u*i(bs)**2 *rbs 109 103 10
+
+j1 104 102 103 j1mod area=1.09
+.model j1mod NJF vto -20 beta 9 lambda 0.01 rs 0.0007
++ cgs 1p cgd 1p is=0.1f
+
+j2 105 102 104 j2mod area=1.09
+.model j2mod NJF vto -98 beta 6.5 lambda 0.01
++ cgs 1p cgd 1p is=0.1f
+
+j3 101 102 105 j3mod area=1.09
+.model j3mod NJF vto -250 beta 1.7 lambda 0.01 rd {rd_temp}
++ cgs 1p cgd 1p is=0.1f
+.param rd_temp=(28.9m+((temp-25)*160u)+(((temp-25)*(temp-25))*1.28u))
+
+CDS 101 103 12pF
+
+bcgs 103 102 i=v(123,0)*i(vcgs)
+Ccgs 121 122 0.7E-12
+Vcgs 121 0 0Vdc
+Ecgs1 122 0 103 102 1
+Ecgs2 123 0 TABLE {V(122)}
++ (0,300)
++ (18,100)
++ (33,0)
+
+bcg1 104 102 i=v(133,0)*i(vcg1)
+Ccg1 131 132 0.7E-12
+Vcg1 131 0 0Vdc
+Ecg11 132 0 104 102 1
+Ecg12 133 0 TABLE {V(132)}
++ (0,200)
++ (19,200)
++ (40,155)
++ (68,84)
++ (98,0)
+
+bcg2 105 102 i=v(143,0)*i(vcg2)
+Ccg2 141 142 1E-12
+Vcg2 141 0 0Vdc
+Ecg21 142 0 105 102 1
+Ecg22 143 0 TABLE {V(142)}
++ (0,159)
++ (98,159)
++ (143,110)
++ (193,45)
++ (250,0)
+
+bcgd 101 102 i=v(148,0)*i(vcgd)
+Ccgd 146 147 0.93E-12
+Vcgd 146 0 0Vdc
+Ecgd1 147 0 101 102 1
+Ecgd2 148 0 TABLE {V(147)}
++ (0,110)
++ (250,110)
++ (400,106)
++ (650,97)
+
+cssub 106 103 39pF
+bdsub 101 106 i=v(113,0)*i(vdsub)
+
+Cbdsub 111 112 1E-12
+Vdsub 111 0 0Vdc
+E11 112 0 101 106 1
+E12 113 0 TABLE {V(101,102)}
++ (0,127)
++ (19,127)
++ (98,85)
++ (250,62)
++ (600,11)
+
+**  HEMT_A End  **
+******************
+
+********************
+**  NMOS_A Begin  **
+*
+* 151a=drainMA, 152=gateMA, 153=sourceMA
+
+XSiMOSFET 151 152 153 FETmod
+rsisnub 151 160 10
+csisnub 160 153 1p  
+
+**  NMOS_A End  **
+******************
+
+******************
+
+****************** 
+** Package capacitance and bias resistance  Begin **
+*
+rbb 103 153 9meg
+ 
+* parasitic Miller capacitance 
+CGDA1 321 101 2pF
+ 
+* substrate bonded to paddle of TO-247
+rcssub 334 106 0.1  
+*GaN gate to substrate
+Rgg 102 106 0.1
+
+** Package capacitance and bias resistance  End **
+******************
+
+********************************
+***   Pin Connection Begin   ***
+********************************
+**  Wire bonds to source common  **
+ 
+Li1A 103 151 1pH rser=1u
+ 
+* Si source to Source Common
+Li3A 199 197 {Li3} rser=1u
+RLi3A 199 197 {Rli3}
+Ri3A 197 153 0.03  
+Li3B 197 193 12p rser=1u
+Ri3B 193 153 11m
+Li3C 193 192 1p rser=1u
+Ri3C 192 153 0.63m
+ 
+********************
+**  301=D1 Begin  **
+* from 101=drainA to 301=D1
+  
+L315 301 311 {L31} rser=1u
+R315 301 311 {Rl31}
+R311 311 101 43m 
+L311 311 312 16p rser=1u
+R312 312 101 20m 
+L312 312 313 40p rser=1u
+R313 313 101 1.4m 
+ 
+**  301=D1 End  **
+******************
+ 
+********************
+**  302=G1 Begin  **
+* from 152=GateA to 302=G1
+ 
+L320 302 325 {L32} rser=1u
+R320 302 325 {Rl32}
+ 
+r1 325 321 0.1 
+
+R321 321 152 175m 
+L321 321 322 101p rser=1u
+R322 322 152 80m 
+L322 322 323 180p rser=1u
+R323 323 152 10.5m 
+ 
+**  302=G1 End  **
+******************
+ 
+********************
+**  303=S1 Begin  **
+* from 199=sourceA to 303=S1
+ 
+ 
+L335B 303 331 {L33B} rser=1u
+R335 303 331 {Rl33B}
+R331 331 334 30m 
+L331 331 332 16p rser=1u
+R332 332 334 11m 
+L332 332 333 12p rser=1u
+R333 333 334 0.39mm 
+L335A  334 199 {L33A} rser=1u ; 
+RL335A 334  199 {Rl33A} 
+ 
+**  303=S1 End  **
+******************
+  
+******************************
+***   Pin Connection End   ***
+******************************
+
+.param Li2=0.6nH rser=1u
+.param Rli2=1.13
+ 
+.param Li3=0.33nH rser=1u
+.param Rli3=.0207
+ 
+.param L31=5.12nH rser=1u
+.param Rl31=0.321
+ 
+.param L32=2nH rser=1u
+.param Rl32=0.514
+ 
+.param L33B=1nH rser=1u
+.param Rl33B=0.308
+.param L33A=0.5nH rser=1u
+.param Rl33A=0.0628
+
+.ends GAN041_650WSB
+
+*****************************************************************************************
+
+
+.SUBCKT FETmod D G S
+
+RLD1 D 4 1.000u
+RLS1 S 7 0.2m
+
+Rsnub 3 SN 0.49
+Csnub SN 6 0.78n
+
+* Drain,gate and source resistances
+RD 4 3 0.1m TC1=7.137m TC2=1.009n
+RG G 2 1.6
+RS 6 7 1.000u
+
+* Body Diode
+RBD 9 4 1u TC1=-5m TC2=0u
+DBD 7 9 D_DBD
+RDS 7 4 24.00MEG TC1=-5.000m
+
+* Internal MOS
+M1 3 2 6 6 MINT
+
+* Gate leakage and gate capacitance
+RGS 2 6 4000MEG
+CGS 2 6 1.37n
+
+* CGD
+C11 11 12 1E-12
+V11 11 0 0Vdc
+B11 3 2 I= V(13,0)*I(V11)
+E11 12 0 3 2 1
+E12 13 0 TABLE {V(12)}
++ (-20.0,572.18) 
++ (-16.0,572.18) 
++ (-15.0,572.18) 
++ (-12.0,572.18) 
++ (-10.0,572.18) 
++ (-8.0,572.18) 
++ (-6.0,572.18) 
++ (-5.0,572.18) 
++ (-4.0,572.18) 
++ (-3.0,572.18) 
++ (-2.0,501.12) 
++ (-1.0,405.85) 
++ (-0.5,377.14) 
++ (-0.2,363.27) 
++ (-0.1,363.37) 
++ (0.0,364.3716) 
++ (0.1,355.82) 
++ (0.2,355.89) 
++ (0.5,331.466) 
++ (1.0,298.092) 
++ (2.0,249.957) 
++ (3.0,218.532) 
++ (4.0,195.414) 
++ (5.0,177.109) 
++ (6.0,163.232) 
++ (8.0,145.508) 
++ (10.0,135.726) 
++ (12.0,130.12) 
++ (15.0,125.703)
+
+.param Vto_temp=(5.15-((temp-25)*0.002))
+
+.MODEL MINT NMOS Vto={Vto_temp} Kp=300 Nfs=900G Eta=10000
++ Level=3 Gamma=0.000 Phi= 600.0m Is=1.000E-24 UO=600.0 Js= 0.000 
++ Pb=800.0m Cj=0.000 Cjsw=0.000 Cgso=0.000 Cgdo=0.000 Cgbo=0.000 Tox= 
++ 100.0n Xj 0.000
++ Vmax=400
+
+.MODEL D_DBD D Bv= 33.00 Ibv= 250.0u Rs=1.000u Is=1.061p
++ N=1.000 M=543.8m VJ=960.6m Fc=500.0m Cjo=2.98n Tt=2n
+
+.ENDS FETmod