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Add GAN190-650FBE simulation
author Daniel O'Connor <darius@dons.net.au>
date Mon, 16 Oct 2023 23:20:01 +1030
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1 *******************************************************************************************************
2 *
3 * GAN041_650WSB Preliminary Spice Model 22/03/2021
4 *
5 * Model generated by Nexperia UK Ltd
6 * Copyright(c) 2021
7 * All rights reserved
8 *
9 * Contains proprietary information which is the property of Nexperia.
10 *
11 * The information presented in this document is believed to be accurate and
12 * reliable and may be changed without notice. No liability will be accepted by the
13 * publisher for any consequence of its use.
14 *
15 * Nexperia UK Ltd
16 *
17 * 650V GaN FET Version 2.0
18 ******************************************************************************************************
19
20 .subckt GAN041_650WSB 301 302 303 334
21 *
22 * 301=D1, 302=G1, 303=S1, 334=mb
23 *
24 *
25 *******************
26 ** HEMT_A Begin **
27 * xxxx
28 * 101=drainHA, 102=gateHA, 103=sourceHA, 106=Si substrate
29
30 *bs 109 103 v=0.0005*i(bs) + 50u*i(bs)**2 *rbs 109 103 10
31
32 j1 104 102 103 j1mod area=1.09
33 .model j1mod NJF vto -20 beta 9 lambda 0.01 rs 0.0007
34 + cgs 1p cgd 1p is=0.1f
35
36 j2 105 102 104 j2mod area=1.09
37 .model j2mod NJF vto -98 beta 6.5 lambda 0.01
38 + cgs 1p cgd 1p is=0.1f
39
40 j3 101 102 105 j3mod area=1.09
41 .model j3mod NJF vto -250 beta 1.7 lambda 0.01 rd {rd_temp}
42 + cgs 1p cgd 1p is=0.1f
43 .param rd_temp=(28.9m+((temp-25)*160u)+(((temp-25)*(temp-25))*1.28u))
44
45 CDS 101 103 12pF
46
47 bcgs 103 102 i=v(123,0)*i(vcgs)
48 Ccgs 121 122 0.7E-12
49 Vcgs 121 0 0Vdc
50 Ecgs1 122 0 103 102 1
51 Ecgs2 123 0 TABLE {V(122)}
52 + (0,300)
53 + (18,100)
54 + (33,0)
55
56 bcg1 104 102 i=v(133,0)*i(vcg1)
57 Ccg1 131 132 0.7E-12
58 Vcg1 131 0 0Vdc
59 Ecg11 132 0 104 102 1
60 Ecg12 133 0 TABLE {V(132)}
61 + (0,200)
62 + (19,200)
63 + (40,155)
64 + (68,84)
65 + (98,0)
66
67 bcg2 105 102 i=v(143,0)*i(vcg2)
68 Ccg2 141 142 1E-12
69 Vcg2 141 0 0Vdc
70 Ecg21 142 0 105 102 1
71 Ecg22 143 0 TABLE {V(142)}
72 + (0,159)
73 + (98,159)
74 + (143,110)
75 + (193,45)
76 + (250,0)
77
78 bcgd 101 102 i=v(148,0)*i(vcgd)
79 Ccgd 146 147 0.93E-12
80 Vcgd 146 0 0Vdc
81 Ecgd1 147 0 101 102 1
82 Ecgd2 148 0 TABLE {V(147)}
83 + (0,110)
84 + (250,110)
85 + (400,106)
86 + (650,97)
87
88 cssub 106 103 39pF
89 bdsub 101 106 i=v(113,0)*i(vdsub)
90
91 Cbdsub 111 112 1E-12
92 Vdsub 111 0 0Vdc
93 E11 112 0 101 106 1
94 E12 113 0 TABLE {V(101,102)}
95 + (0,127)
96 + (19,127)
97 + (98,85)
98 + (250,62)
99 + (600,11)
100
101 ** HEMT_A End **
102 ******************
103
104 ********************
105 ** NMOS_A Begin **
106 *
107 * 151a=drainMA, 152=gateMA, 153=sourceMA
108
109 XSiMOSFET 151 152 153 FETmod
110 rsisnub 151 160 10
111 csisnub 160 153 1p
112
113 ** NMOS_A End **
114 ******************
115
116 ******************
117
118 ******************
119 ** Package capacitance and bias resistance Begin **
120 *
121 rbb 103 153 9meg
122
123 * parasitic Miller capacitance
124 CGDA1 321 101 2pF
125
126 * substrate bonded to paddle of TO-247
127 rcssub 334 106 0.1
128 *GaN gate to substrate
129 Rgg 102 106 0.1
130
131 ** Package capacitance and bias resistance End **
132 ******************
133
134 ********************************
135 *** Pin Connection Begin ***
136 ********************************
137 ** Wire bonds to source common **
138
139 Li1A 103 151 1pH rser=1u
140
141 * Si source to Source Common
142 Li3A 199 197 {Li3} rser=1u
143 RLi3A 199 197 {Rli3}
144 Ri3A 197 153 0.03
145 Li3B 197 193 12p rser=1u
146 Ri3B 193 153 11m
147 Li3C 193 192 1p rser=1u
148 Ri3C 192 153 0.63m
149
150 ********************
151 ** 301=D1 Begin **
152 * from 101=drainA to 301=D1
153
154 L315 301 311 {L31} rser=1u
155 R315 301 311 {Rl31}
156 R311 311 101 43m
157 L311 311 312 16p rser=1u
158 R312 312 101 20m
159 L312 312 313 40p rser=1u
160 R313 313 101 1.4m
161
162 ** 301=D1 End **
163 ******************
164
165 ********************
166 ** 302=G1 Begin **
167 * from 152=GateA to 302=G1
168
169 L320 302 325 {L32} rser=1u
170 R320 302 325 {Rl32}
171
172 r1 325 321 0.1
173
174 R321 321 152 175m
175 L321 321 322 101p rser=1u
176 R322 322 152 80m
177 L322 322 323 180p rser=1u
178 R323 323 152 10.5m
179
180 ** 302=G1 End **
181 ******************
182
183 ********************
184 ** 303=S1 Begin **
185 * from 199=sourceA to 303=S1
186
187
188 L335B 303 331 {L33B} rser=1u
189 R335 303 331 {Rl33B}
190 R331 331 334 30m
191 L331 331 332 16p rser=1u
192 R332 332 334 11m
193 L332 332 333 12p rser=1u
194 R333 333 334 0.39mm
195 L335A 334 199 {L33A} rser=1u ;
196 RL335A 334 199 {Rl33A}
197
198 ** 303=S1 End **
199 ******************
200
201 ******************************
202 *** Pin Connection End ***
203 ******************************
204
205 .param Li2=0.6nH rser=1u
206 .param Rli2=1.13
207
208 .param Li3=0.33nH rser=1u
209 .param Rli3=.0207
210
211 .param L31=5.12nH rser=1u
212 .param Rl31=0.321
213
214 .param L32=2nH rser=1u
215 .param Rl32=0.514
216
217 .param L33B=1nH rser=1u
218 .param Rl33B=0.308
219 .param L33A=0.5nH rser=1u
220 .param Rl33A=0.0628
221
222 .ends GAN041_650WSB
223
224 *****************************************************************************************
225
226
227 .SUBCKT FETmod D G S
228
229 RLD1 D 4 1.000u
230 RLS1 S 7 0.2m
231
232 Rsnub 3 SN 0.49
233 Csnub SN 6 0.78n
234
235 * Drain,gate and source resistances
236 RD 4 3 0.1m TC1=7.137m TC2=1.009n
237 RG G 2 1.6
238 RS 6 7 1.000u
239
240 * Body Diode
241 RBD 9 4 1u TC1=-5m TC2=0u
242 DBD 7 9 D_DBD
243 RDS 7 4 24.00MEG TC1=-5.000m
244
245 * Internal MOS
246 M1 3 2 6 6 MINT
247
248 * Gate leakage and gate capacitance
249 RGS 2 6 4000MEG
250 CGS 2 6 1.37n
251
252 * CGD
253 C11 11 12 1E-12
254 V11 11 0 0Vdc
255 B11 3 2 I= V(13,0)*I(V11)
256 E11 12 0 3 2 1
257 E12 13 0 TABLE {V(12)}
258 + (-20.0,572.18)
259 + (-16.0,572.18)
260 + (-15.0,572.18)
261 + (-12.0,572.18)
262 + (-10.0,572.18)
263 + (-8.0,572.18)
264 + (-6.0,572.18)
265 + (-5.0,572.18)
266 + (-4.0,572.18)
267 + (-3.0,572.18)
268 + (-2.0,501.12)
269 + (-1.0,405.85)
270 + (-0.5,377.14)
271 + (-0.2,363.27)
272 + (-0.1,363.37)
273 + (0.0,364.3716)
274 + (0.1,355.82)
275 + (0.2,355.89)
276 + (0.5,331.466)
277 + (1.0,298.092)
278 + (2.0,249.957)
279 + (3.0,218.532)
280 + (4.0,195.414)
281 + (5.0,177.109)
282 + (6.0,163.232)
283 + (8.0,145.508)
284 + (10.0,135.726)
285 + (12.0,130.12)
286 + (15.0,125.703)
287
288 .param Vto_temp=(5.15-((temp-25)*0.002))
289
290 .MODEL MINT NMOS Vto={Vto_temp} Kp=300 Nfs=900G Eta=10000
291 + Level=3 Gamma=0.000 Phi= 600.0m Is=1.000E-24 UO=600.0 Js= 0.000
292 + Pb=800.0m Cj=0.000 Cjsw=0.000 Cgso=0.000 Cgdo=0.000 Cgbo=0.000 Tox=
293 + 100.0n Xj 0.000
294 + Vmax=400
295
296 .MODEL D_DBD D Bv= 33.00 Ibv= 250.0u Rs=1.000u Is=1.061p
297 + N=1.000 M=543.8m VJ=960.6m Fc=500.0m Cjo=2.98n Tt=2n
298
299 .ENDS FETmod