comparison libs/STM32F10x_StdPeriph_Lib_V3.5.0/Project/STM32F10x_StdPeriph_Examples/TIM/6Steps/readme.txt @ 0:c59513fd84fb

Initial commit of STM32 test code.
author Daniel O'Connor <darius@dons.net.au>
date Mon, 03 Oct 2011 21:19:15 +1030
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1 /**
2 @page TIM_6Steps TIM 6 Steps example
3
4 @verbatim
5 ******************** (C) COPYRIGHT 2011 STMicroelectronics *******************
6 * @file TIM/6Steps/readme.txt
7 * @author MCD Application Team
8 * @version V3.5.0
9 * @date 08-April-2011
10 * @brief Description of the TIM 6 Steps example.
11 ******************************************************************************
12 * THE PRESENT FIRMWARE WHICH IS FOR GUIDANCE ONLY AIMS AT PROVIDING CUSTOMERS
13 * WITH CODING INFORMATION REGARDING THEIR PRODUCTS IN ORDER FOR THEM TO SAVE
14 * TIME. AS A RESULT, STMICROELECTRONICS SHALL NOT BE HELD LIABLE FOR ANY
15 * DIRECT, INDIRECT OR CONSEQUENTIAL DAMAGES WITH RESPECT TO ANY CLAIMS ARISING
16 * FROM THE CONTENT OF SUCH FIRMWARE AND/OR THE USE MADE BY CUSTOMERS OF THE
17 * CODING INFORMATION CONTAINED HEREIN IN CONNECTION WITH THEIR PRODUCTS.
18 ******************************************************************************
19 @endverbatim
20
21 @par Example Description
22
23 This example shows how to configure the TIM1 peripheral to generate 6 Steps.
24 The STM32F10x TIM1 peripheral offers the possibility to program in advance the
25 configuration for the next TIM1 outputs behaviour (step) and change the configuration
26 of all the channels at the same time. This operation is possible when the COM
27 (commutation) event is used.
28 The COM event can be generated by software by setting the COM bit in the TIM1_EGR
29 register or by hardware (on TRC rising edge).
30 In this example, a software COM event is generated each 100 ms: using the SysTick
31 interrupt.
32 The TIM1 is configured in Timing Mode, each time a COM event occurs, a new TIM1
33 configuration will be set in advance.
34
35 The break Polarity is used at High level.
36
37 The following Table describes the TIM1 Channels states:
38 @verbatim
39 -----------------------------------------------
40 | Step1 | Step2 | Step3 | Step4 | Step5 | Step6 |
41 ----------------------------------------------------------
42 |Channel1 | 1 | 0 | 0 | 0 | 0 | 1 |
43 ----------------------------------------------------------
44 |Channel1N | 0 | 0 | 1 | 1 | 0 | 0 |
45 ----------------------------------------------------------
46 |Channel2 | 0 | 0 | 0 | 1 | 1 | 0 |
47 ----------------------------------------------------------
48 |Channel2N | 1 | 1 | 0 | 0 | 0 | 0 |
49 ----------------------------------------------------------
50 |Channel3 | 0 | 1 | 1 | 0 | 0 | 0 |
51 ----------------------------------------------------------
52 |Channel3N | 0 | 0 | 0 | 0 | 1 | 1 |
53 ----------------------------------------------------------
54 @endverbatim
55
56 @par Directory contents
57
58 - TIM/6Steps/stm32f10x_conf.h Library Configuration file
59 - TIM/6Steps/stm32f10x_it.c Interrupt handlers
60 - TIM/6Steps/stm32f10x_it.h Interrupt handlers header file
61 - TIM/6Steps/main.c Main program
62 - TIM/6Steps/system_stm32f10x.c STM32F10x system source file
63
64 @par Hardware and Software environment
65
66 - This example runs on STM32F10x Connectivity line, High-Density, High-Density
67 Value line, Medium-Density, XL-Density, Medium-Density Value line, Low-Density
68 and Low-Density Value line Devices.
69
70 - This example has been tested with STMicroelectronics STM32100E-EVAL (High-Density
71 Value line), STM32100B-EVAL (Medium-Density Value line), STM3210C-EVAL (Connectivity line),
72 STM3210E-EVAL (High-Density and XL-Density) and STM3210B-EVAL (Medium-Density)
73 evaluation boards and can be easily tailored to any other supported device
74 and development board.
75
76
77 - STM3210C-EVAL Set-up
78 - Connect the TIM1 pins(TIM1 full remapped pins) to an oscilloscope to monitor the different waveforms:
79 - TIM1_CH3 pin (PE.13)
80 - TIM1_CH1N pin (PE.08)
81 - TIM1_CH2 pin (PE.11)
82 - TIM1_CH3N pin (PE.12)
83 - TIM1_CH1 pin (PE.09)
84 - TIM1_CH2N pin (PE.10)
85 - Connect the TIM1 break pin TIM1_BKIN pin (PE.15) to the GND. To generate a
86 break event, switch this pin level from 0V to 3.3V.
87
88 - STM3210E-EVAL, STM3210B-EVAL, STM32100B-EVAL and STM32100E-EVAL Set-up
89 - Connect the TIM1 pins to an oscilloscope to monitor the different waveforms:
90 - TIM1_CH3 pin (PA.10)
91 - TIM1_CH1N pin (PB.13)
92 - TIM1_CH2 pin (PA.09)
93 - TIM1_CH3N pin (PB.15)
94 - TIM1_CH1 pin (PA.08)
95 - TIM1_CH2N pin (PB.14)
96 - Connect the TIM1 break pin TIM1_BKIN pin (PB.12) to the GND. To generate a
97 break event, switch this pin level from 0V to 3.3V.
98
99
100 @par How to use it ?
101
102 In order to make the program work, you must do the following :
103 - Copy all source files from this example folder to the template folder under
104 Project\STM32F10x_StdPeriph_Template
105 - Open your preferred toolchain
106 - Rebuild all files and load your image into target memory
107 - Run the example
108
109 @note
110 - Low-density Value line devices are STM32F100xx microcontrollers where the
111 Flash memory density ranges between 16 and 32 Kbytes.
112 - Low-density devices are STM32F101xx, STM32F102xx and STM32F103xx
113 microcontrollers where the Flash memory density ranges between 16 and 32 Kbytes.
114 - Medium-density Value line devices are STM32F100xx microcontrollers where
115 the Flash memory density ranges between 64 and 128 Kbytes.
116 - Medium-density devices are STM32F101xx, STM32F102xx and STM32F103xx
117 microcontrollers where the Flash memory density ranges between 64 and 128 Kbytes.
118 - High-density Value line devices are STM32F100xx microcontrollers where
119 the Flash memory density ranges between 256 and 512 Kbytes.
120 - High-density devices are STM32F101xx and STM32F103xx microcontrollers where
121 the Flash memory density ranges between 256 and 512 Kbytes.
122 - XL-density devices are STM32F101xx and STM32F103xx microcontrollers where
123 the Flash memory density ranges between 512 and 1024 Kbytes.
124 - Connectivity line devices are STM32F105xx and STM32F107xx microcontrollers.
125
126 * <h3><center>&copy; COPYRIGHT 2011 STMicroelectronics</center></h3>
127 */